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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID
1.1A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1％
TYPICAL
EMBJ0N20Q
LIMITS ±20 1.1 0.7 4.4 6.25 2.5
‐55 to 150
UNIT V
A
W °C
MAXIMUM 20 150
UNIT °C / W
2012/8/15 p.
EMBJ0N20Q Datasheet
