Datasheet4U Logo Datasheet4U.com

EMBJ0N25A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number EMBJ0N25A
Manufacturer Excelliance MOS
File Size 227.64 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMBJ0N25A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
EMB09P03A P-Channel 30V MOSFET VBsemi
EMB10 PNP Digital Transistors Rohm
EMB10FHA PNP -100mA -50V Complex Digital Transistors ROHM
EMB11 Dual Digital Transistors Rohm
EMB11 Dual Digital Transistors JCET

Other Datasheets by Excelliance MOS

Part Number Description
EMBJ0N25CS MOSFET
EMBJ0N25Q N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMBJ0N20A MOSFET
EMBJ0N20CS MOSFET
EMBJ0N20G MOSFET

Full PDF Text Transcription

Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 250V D RDSON (MAX.) 1Ω ID 4.4A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 3mH, ID=1A, RG=25Ω Repetitive Avalanche Energy2 L = 1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature.
Published: |