EMBJ0N25Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMBJ0N25Q
Manufacturer	Excelliance MOS
File Size	185.00 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMBJ0N25Q Datasheet

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EMBJ0N25A	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 250V D RDSON (MAX.) 1Ω ID 1.1A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL EMBJ0N25Q LIMITS ±20 1.1 0.7 4.4 6.25 2.5 ‐55 to 150 UNIT V A W °C MAXIMUM 20 150 UNIT °C / W 2012/8/15 p.

Published: Apr 25, 2017 |