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EMD07P03H
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
8mΩ
ID
‐70A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐50A, RG=25Ω
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS PD Tj, Tstg
±25 ‐70 ‐50 ‐150 ‐50 125 50 20 ‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.
EMD07P03H Datasheet
