EMD08N10E datasheet by Excelliance MOS.
| Part number | EMD08N10E |
|---|---|
| Datasheet | EMD08N10E-ExcellianceMOS.pdf |
| File Size | 227.46 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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EMD08N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMD08N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD08N06E | MOSFET |
| EMD08N06H | MOSFET |
| EMD08N80F | MOSFET |
| EMD02N06E | MOSFET |
| EMD02N06TL8 | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD02N10TL8 | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD02N60A | MOSFET |
| EMD02N60AK | MOSFET |
| EMD02N60CS | MOSFET |
