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EMD11N15E - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

N-CH BVDSS 150V RDSON (MAX.)@VGS=10V 11.0mΩ ID @TC=25℃ 120A ID @TA=25℃ 10A Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Dra

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Datasheet Details

Part number EMD11N15E
Manufacturer Excelliance MOS
File Size 453.55 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 150V RDSON (MAX.)@VGS=10V 11.0mΩ ID @TC=25℃ 120A ID @TA=25℃ 10A Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Repetitive Avalanche Energy2 L = 0.
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