EMD11N15E - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS
General Description
N-CH
BVDSS
150V
RDSON (MAX.)@VGS=10V
11.0mΩ
ID @TC=25℃
120A
ID @TA=25℃
10A
Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Dra
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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
150V
RDSON (MAX.)@VGS=10V
11.0mΩ
ID @TC=25℃
120A
ID @TA=25℃
10A
Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free
▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C TC = 100 °C
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Repetitive Avalanche Energy2
L = 0.
EMD11N15E Datasheet
