EMD11N15F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

BVDSS 150V RDSON (MAX.) 11.5mΩ ID 45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC

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EMD11N15F single n-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMD11N15F
Manufacturer	Excelliance MOS
File Size	360.33 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD11N15F Datasheet

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 11.5mΩ ID 45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=30A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMD11N15F LIMITS ±20 45 28 180 30 45 22.