EMD26N10E Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
EMD26N10E datasheet by Excelliance MOS.
| Part number | EMD26N10E |
|---|---|
| Datasheet | EMD26N10E-ExcellianceMOS.pdf |
| File Size | 247.04 KB |
| Manufacturer | Excelliance MOS |
| Description | N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
|
|
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMD26N10F | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD26N10G | MOSFET |
| EMD25N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD02N06E | MOSFET |
| EMD02N06TL8 | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD02N10TL8 | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD02N60A | MOSFET |
| EMD02N60AK | MOSFET |
| EMD02N60CS | MOSFET |
| EMD02N60CSK | MOSFET |