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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 0.5A G
Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐ Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
VGS ID IDM PD Tj, Tstg
TYPICAL
2015/4/15
EMDJ0N20J
LIMITS ±30 0.5 0.3 2 125 0.
EMDJ0N20J Datasheet
