EMF04P02H - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF04P02H
Manufacturer	Excelliance MOS
File Size	231.83 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF04P02H Datasheet
Additional preview pages of the EMF04P02H datasheet.

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Full PDF Text Transcription

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EMF04P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 5.5mΩ ID ‐72A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐72 ID TC = 100 °C ‐45 IDM ‐240 Avalanche Current IAS ‐48 Avalanche Energy L = 0.1mH, IAS=‐48A, RG=25Ω EAS 115 Repetitive Avalanche Energy2 L = 0.05mH EAR 57 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.

Published: Jun 23, 2024 |