EMF20N02J - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF20N02J
Manufacturer	Excelliance MOS
File Size	175.78 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF20N02J Datasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 20V RDSON (MAX.) 20mΩ ID 6A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMF20N02J LIMITS ±12 6 4 24 1.25 0.8 -55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RθJA 100 Junction-to-Lead4 RθJL 55 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ 3100°C / W when mounted on a 1 in2 pad of 2 oz copper.