EMF20N02VAT - N?Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF20N02VAT
Manufacturer	Excelliance MOS
File Size	189.72 KB
Description	N?Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF20N02VAT Datasheet

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EMF20N02VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 20mΩ ID 7A G S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg LIMITS ±12 7 5.5 28 2.08 1.33 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.