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P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
RDSON (MAX.)
44mΩ
ID
‐12A
P‐Channel MOSFET
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
TC = 25 °C ID
TA = 25 °C
Pulsed Drain Current1
TC = 100 °C IDM
TC = 25 °C
Power Dissipation
PD
TC = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
EMF44P02V
LIMITS ±12 ‐12 ‐6 ‐8 ‐48 21 8.3 2.5 1.