EMF02P02H- P-Channel Logic Level Enhancement Mode Field Effect Transistor
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P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
-30V
RDSON (MAX.)
44mΩ
ID
-4A
P Channel MOSFET
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C ID
TA = 70 °C
IDM
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
EMF44P03JS
LIMITS ±12 -4 -3 -16 1.04 0.66
-55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient3
RJA (T ≤ 10sec) RJA (Steady State)
1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 3 The device mounted on a 1 in2 pad of 2 oz copper.