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EMP16N04HS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
1.6mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C
100
ID
TC = 100 °C
100
IDM
400
Avalanche Current
IAS
85
Avalanche Energy
L = 0.1mH, ID=85A, RG=25Ω
EAS
361
Repetitive Avalanche Energy3
L = 0.05mH
EAR
180
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
65 26 ‐55 to 150
100% UIS testing in condition of VD=30V, L=0.
EMP16N04HS Datasheet
