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EMP16N04HS - MOSFET

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Part number EMP16N04HS
Manufacturer Excelliance MOS
File Size 211.67 KB
Description MOSFET
Datasheet download datasheet EMP16N04HS Datasheet
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Full PDF Text Transcription

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EMP16N04HS N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 1.6mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C 100 ID TC = 100 °C 100 IDM 400 Avalanche Current IAS 85 Avalanche Energy L = 0.1mH, ID=85A, RG=25Ω EAS 361 Repetitive Avalanche Energy3 L = 0.05mH EAR 180 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 65 26 ‐55 to 150 100% UIS testing in condition of VD=30V, L=0.
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