EMP19K03HPC - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

Q1 Q2 BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 30V 6.6mΩ 8.8mΩ 30V 2.4mΩ 3.4mΩ ID @TC=25℃ 62A 171A ID @TA=25℃ 20A 38A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TES

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EMP19K03HPC dual n-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMP19K03HPC
Manufacturer	Excelliance MOS
File Size	423.10 KB
Description	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMP19K03HPC Datasheet

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EMP19K03HPC Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 30V 6.6mΩ 8.8mΩ 30V 2.4mΩ 3.4mΩ ID @TC=25℃ 62A 171A ID @TA=25℃ 20A 38A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH L = 0.05mH VGS ±20 ±20 ID 62 171 39 108 ID 20 38 16 30 IDM 114 294 IAS 34 65 EAS 57.8 211.3 EAR 28.9 105.