EMP19K03HPC - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

Q1 Q2 BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 30V 6.6mΩ 8.8mΩ 30V 2.4mΩ 3.4mΩ ID @TC=25℃ 62A 171A ID @TA=25℃ 20A 38A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TES

Excelliance MOS

📥 Download Datasheet

Datasheet Details

Part number	EMP19K03HPC
Manufacturer	Excelliance MOS
File Size	423.10 KB
Description	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMP19K03HPC Datasheet
Additional preview pages of the EMP19K03HPC datasheet.

📁 Similar Datasheet

EMP11 - Switching diode (Rohm)
EMP-8603 - Mini-PCI Adapter (EnGenius)
EMP201 - 17.5 - 21.0 GHz Power Ammplifier MMIC (Excelics Semiconductor)
EMP201 - 17.5 - 21.0 GHz Power Ammplifier MMIC (Excelics Semiconductor)
EMP202 - Single-Chip Dual-Channel AC97 Audio Codec (EMPIA Technology)
EMP2033 - 300mA CMOS Linear Regulator (Elite Semiconductor)
EMP207 - 17.0 - 20.0 GHz Power Amplifier MMIC (Excelics Semiconductor)
EMP208 - 17.5 - 20.0 GHz Power Amplifier MMIC (Excelics Semiconductor)
EMP209 - 17.5 - 20.0 GHz Power Amplifier MMIC (Excelics Semiconductor)
EMP210 - 9.5 - 12 GHz Power Amplifier MMIC (Excelics Semiconductor)

Other Datasheets by Excelliance MOS

EMP19K03HPCS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP16N04HS - MOSFET
EMP18K03HPCS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP21N03HC - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP21N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP26P03H - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP29N04AS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP29N04E - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

EMP19K03HPC Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 30V 6.6mΩ 8.8mΩ 30V 2.4mΩ 3.4mΩ ID @TC=25℃ 62A 171A ID @TA=25℃ 20A 38A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH L = 0.05mH VGS ±20 ±20 ID 62 171 39 108 ID 20 38 16 30 IDM 114 294 IAS 34 65 EAS 57.8 211.3 EAR 28.9 105.

Published: Jun 23, 2024 |