Datasheet4U Logo Datasheet4U.com

EMP19K03HPCS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet preview – EMP19K03HPCS

Datasheet Details

Part number EMP19K03HPCS
Manufacturer Excelliance MOS
File Size 410.86 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMP19K03HPCS Datasheet
Additional preview pages of the EMP19K03HPCS datasheet.
Other Datasheets by Excelliance MOS

Full PDF Text Transcription

Click to expand full text
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 5.7mΩ 2.2mΩ ID 48A 90A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP19K03HPCS LIMITS UNIT Q1 Q2 Gate-Source Voltage VGS ±20 ±12 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TA= 25 °C(t≦10s) TA= 25 °C(Steady-State) TC = 100 °C 48 90 ID 18 29 14 23 A 30 57 IDM 100 250 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, RG=25Ω L = 0.
Published: |