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Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH-Q1 N-CH-Q2
BVDSS
30V
30V
RDSON (MAX.) 5.7mΩ 2.2mΩ
ID
48A
90A
Dual N Channel MOSFET
UIS, Rg 100% Tested
RoHS & Halogen Free & TSCA Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMP19K03HPCS
LIMITS
UNIT
Q1
Q2
Gate-Source Voltage
VGS
±20
±12
V
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TA= 25 °C(t≦10s) TA= 25 °C(Steady-State) TC = 100 °C
48
90
ID
18
29
14
23
A
30
57
IDM
100
250
Avalanche Current Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω L = 0.