EMZF14R02W Datasheet | Excelliance MOS

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 14mΩ 9.5A Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg LIMITS ±12 9.5 7.7 40 2.1 1.3 ‐55 to 150 UNIT V W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction‐to‐Ambient3 (t≦10s) Junction‐to‐Ambient3 SYMBOL RJA RJA TYPICAL 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3The value of RJA is measured with the device mounted on a 1 in2 pad of 2 oz copper. MAXIMUM 60 105 UNIT °C / W 2014/11/4 p.1 ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP...