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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
RDSON (MAX.)
44mΩ
ID ‐4A
Pb‐Free Lead Plating & Halogen Free
ESD Protection – up to 2KV HBM
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMZF50P02J
LIMITS
UNIT
Gate‐Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
‐4 ‐3.5 ‐16
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
1.25 0.
EMZF50P02J Datasheet
