EFA080A Datasheet | Execelies

.. Excelics DATA SHEET - - - - - - +26.0d Bm TYPICAL OUTPUT POWER 10.0d B TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15m A PER BIN RANGE 50 D Low Distortion Ga As Power FET 510 116 340 100 40 S G S G S ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=2.0m A Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN 24.0 8.0 TYP 26.0 26.0 10.0 7.5 35 UNIT d Bm d B % 130 90 210 120 -2.0 300 m A m S -3.5 V V V o Drain Breakdown Voltage Igd=1.0m A Source Breakdown Voltage Igs=1.0m A Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 55 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 260m A Ids Forward Gate Current 20m A 4m A Igsf Input Power 25d Bm @ 3d B pression Pin o Channel Temperature 175 C 150o C Tch o Storage Temperature -65/175 C -65/150o C Tstg Total Power Dissipation 2.5 W 2.1 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: .excelics. Data Sheet 4 U . .. DATA SHEET Low Distortion Ga As Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.983 -38.9 0.949 -71.6...