EFA080A-100F
EFA080A-100F is Low Distortion GaAs Power FET manufactured by Execlics.
Excelics
DATA SHEET
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- - HERMETIC 100mil CERAMIC FLANGE PACKAGE +26.0dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
Low Distortion GaAs Power FET
5DG 'LD
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7<3
7<3
All Dimensions In mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB pression f=12GHz Vds=8V, Ids=50% Idss Power Added...