Click to expand full text
Excelics
DATA SHEET
180 Min. (All Leads)
EFA040A-70
Low Distortion GaAs Power FET
44 19 4
• • • • • •
www.DataSheet4U.com
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
20 D
S
S
40
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz 60 45 MIN 20.
EFA040A-70 Datasheet
