EFA060B-70 Datasheet | Execlics

Excelics DATA SHEET 180 Min. (All Leads) Low Distortion GaAs Power FET 44 19 4 - - - - - - .. NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +24.0dBm TYPICAL OUTPUT POWER 7.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1dB pression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency...