Execlics EFA072A
Low Distortion GaAs Power FET
| Part No. | EFA072A |
|---|---|
| Datasheet | EFA072A Download |
| Manufacturer |  Execlics |
| Description | Low Distortion GaAs Power FET |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(Ta = 25 C) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA O MIN 22.5 8.0 TYP 25.0 25.0 10.0 7.5 32 MAX UNIT dBm dB % 120 80 190 110 -2.0 270 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 55 C/WMAXIMUM RATINGS
AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 260Ma Ids Forward Gate Current 20mA 4mA Igsf Input Power 25dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 2.5 W 2.1 W Pt Note: 1.