EFA072A Datasheet | Execlics

Excelics PRELIMINARY DATA SHEET - - - - - .. Low Distortion GaAs Power FET - +25.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15mA PER BIN RANGE Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB...