EFA018A-70 Datasheet | Execlics

Excelics DATA SHEET - - - - - - - .. Low Distortion Ga As Power FET 44 19 4 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +18.5d Bm TYPICAL OUTPUT POWER 10.5d B TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1d B NOISE FIGURE AND 10.5d B ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D 180 Min. (All Leads) ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE NF Ga Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=6V, Ids=50% Idss f=12GHz Noise Figure f=12GHz Vds=2V, Ids=15m A Associated Gain f=12GHz Vds=2V, Ids=15m A Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 m A -10 -6 MIN 16.5 9.0 All Dimensions In mils. TYP 18.5 18.5 10.5 8.0 33 1.1 10.5 UNIT d Bm d B % d B d B 25 20 50 30 -2.0 -15 -14 480- 80 m A m S -3.5 V V V o Drain Breakdown Voltage Igd=0.5m A Source Breakdown Voltage Igs=0.5m A Thermal Resistance C/W - Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10V 6V Vds Gate-Source Voltage -6V -4V Vgs Drain Current Idss 40m A Ids Forward Gate Current 4m A 0.7m A Igsf Input Power 17d Bm @ 3d B pression Pin Channel Temperature 175o C 150 o C Tch o Storage Temperature -65/175 C -65/150 o C Tstg Total Power Dissipation 285m W 240m W Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: .excelics. DATA SHEET Low Distortion Ga As Power FET S-PARAMETERS...