Part FMBBAV99
Description 200mW EPITAXIAL PLANAR DIODES
Category Diode
Manufacturer FCI
Size 85.59 KB
FCI
FMBBAV99

Overview

Pin 2 Pin 1 .037 .115 .037 2 3 1 .016 Pin 3 .043 .004.

  • PLANAR PROCESS
  • 200 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse RMS Reverse (rms) Average Forward Rectified Non-Repetitive Peak Forward Surge Current...I FSM Forward @ IF = 100 mA DC Reverse Power Typical Junction Reverse Recovery Operating Temperature Storage Temperature .01 uF PVV = 100nS 5K Ohms @ VR = 70V
  • INDUSTRY STANDARD SOT-23 PACKAGE
  • MEETS UL SPECIFICATION 94V-0 FMBBAV99 FMBBAV99 85 75 Units Volts Volts Device Under T est Test Output IF 50 Ohms RG = 50 Ohms Page 10-27 IR Trr 0.1 IR FMBBAV99