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FKBA3204 - Dual N-Channel Enhancement Mode MOSFET

Description

The FKBA3204 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.

The FKBA3204 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

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Datasheet Details

Part number FKBA3204
Manufacturer FETek
File Size 634.36 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet FKBA3204 Datasheet
Additional preview pages of the FKBA3204 datasheet.

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Full PDF Text Transcription

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FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBA3204 Dual N-Channel Enhancement Mode MOSFET Product Summary BVDSS RDSON ID 30V 8.5mΩ 35A Description PRPAK5X6 Pin Configuration The FKBA3204 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications. The FKBA3204 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
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