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FKBA3204 Datasheet Dual N-Channel Enhancement Mode MOSFET

Manufacturer: FETek

Overview: FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBA3204 Dual N-Channel Enhancement Mode MOSFET Product Summary BVDSS RDSON ID 30V 8.

Datasheet Details

Part number FKBA3204
Manufacturer FETek
File Size 634.36 KB
Description Dual N-Channel Enhancement Mode MOSFET
Download FKBA3204 Download (PDF)

General Description

PRPAK5X6 Pin Configuration The FKBA3204 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.

The FKBA3204 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.