FKBE2730 Datasheet | FETek

Description The FKBE2730 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The FKBE2730 meet the Ro HS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Rating 20 ±12 7 5.8 43 1.47 -55 to 150 -55 to 150 Max. Units V V A A A W ℃ ℃ Unit ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS IGSS Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250u A Reference to 25℃ , ID=1m A VGS=4.5V , ID=3A VGS=4.0V , ID=3A VGS=3.1V , ID=3A VGS=2.5V , ID=3A VGS=VDS , ID =250u A VDS=16V , VGS=0V , TJ=25℃ VGS=±12V , VDS=0V VDS=0V , VGS=0V , f=1MHz VDS=16V , VGS=4.5V , ID=3A VDD=10V , VGS=4.5V , RG=3.3, ID=3A VDS=15V , VGS=0V , F=1MHz Min. 20 ----------0.5 ----------------------------- Typ. --- 0.014 14.5 15 18.5 22 ---2.09 ----1.83 9.86 1.41...