FKBE2738
FKBE2738 is Dual N-Channel MOSFET manufactured by FETek.
Description
The FKBE2738 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion one cell battery pack applications. The FKBE2738 meet the Ro HS and Green Product requirement with full function reliability approved.
PRPAK3x3 NEP Pin Configuration
D1/D2 2
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJA
Parameter Thermal Resistance Junction-ambient 1 (Steady State)
Thermal Resistance Junction-ambient 1 (t<10S)
Rating
20 ±12 12 9.6 72 1.32 -55 to 150 -55 to 150
Units
V V A A A W ℃ ℃
Typ. -----
Max. 95 55
Unit ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : A
FETek Technology Corp.
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS
Parameter Drain-Source Breakdown Voltage
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) IDSS IGSS g FS Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250u A VGS=4.5V , ID=3A VGS=4.0V , ID=3A VGS=3.1V , ID=3A VGS=2.5V , ID=3A VGS=VDS , ID =250u A VDS=16V , VGS=0V , TJ=25℃ VGS=±12V , VDS=0V VDS=5V , ID =6A VDS=15V , VGS=4.5V , ID=10A
VDD=15V , VGS=4.5V , RG=6.0, ID=6A
VDS=10V , VGS=0V , F=1MHz
Min. 20 --------0.5 ---------------------------
Typ. --8.0 8.5 10.5 12.0 ------28 13.5 2.2 7.2 22 85 125 46 775 255 230
Max. --9.5 9.8 12.5 15.0 1.5 1 ±5...
