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FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKCC8233
Dual N-Ch Fast Switching MOSFETs Product Summary
BVDSS
RDSON
ID
20V
7.2mΩ
11A
General Description
DFN2x3 Pin Configuration
The FKCC8233 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The FKCC8233 meet the RoHS and Green Pin1 Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
FKCC8233 Datasheet
