FKCE2530 Datasheet | FETek

Description DFN3.3x3.3 Pin Configuration The FKCE2530 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKCE2530 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Rating 20 ±12 50 39 200 80 40 83 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ------- Max. 20 55 1.5 Unit ℃/W ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250u A VGS=4.5V , ID=20A VGS=2.5V , ID=20A VGS=VDS , ID =250u A VDS=16V , VGS=0V , TJ=25℃ VDS=16V , VGS=0V , TJ=125℃ VGS=±10V , VDS=0V VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=10V , ID=20A VDD=15V , VGS=10V , RG=3,...