FKD6101 Datasheet | FETek

Description The FKD6101 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD6101 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. P-Ch 60V Fast Switching MOSFETs Product Summery BVDSS -60V RDSON 140mΩ ID -12A TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -60 ±20 -12 -8 -25 20 -20 42 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ----- Max. 62 3 Unit ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250u A VGS=-10V , ID=-5A VGS=-4.5V , ID=-4A VGS=VDS , ID =-250u A VDS=-48V , VGS=0V , TJ=25℃ VDS=-48V , VGS=0V , TJ=150℃ VGS=±20V , VDS=0V VDS=-5V ,...