FKD6113 Datasheet | FETek

Description The FKD6113 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD6113 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. P-Ch 60V Fast Switching MOSFETs Product Summary BVDSS -60V RDSON 90mΩ TO252 Pin Configuration ID -13A Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice. .fetek..tw Ver : A Rating -60 ±20 -13 -8.3 -3.3 -2.7 -26 29.8 24.4 31.3 2 -55 to 150 -55 to 150 Units V V A A A A A m J A W W ℃ ℃ Typ. ----- Max. 62 4 Unit ℃/W ℃/W FETek Technology Corp. P-Ch 60V Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer...