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FKN3502 - N-Channel MOSFET

General Description

The FKN3502 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKN3502 meet the RoHS and Green Product requirement with full function reliability approved.

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Datasheet Details

Part number FKN3502
Manufacturer FETek
File Size 519.37 KB
Description N-Channel MOSFET
Datasheet download datasheet FKN3502 Datasheet

Full PDF Text Transcription for FKN3502 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FKN3502. For precise diagrams, and layout, please refer to the original PDF.

FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKN3502 N-Ch 30V ...

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cline  Advanced high cell density Trench technology FKN3502 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 27mΩ ID 5.8A Description The FKN3502 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3502 meet the RoHS and Green Product requirement with full function reliability approved.