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FKN3504 - N-Channel MOSFET

Description

The FKN3504 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKN3504 meet the RoHS and Green Product requirement with full function reliability approved.

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Datasheet Details

Part number FKN3504
Manufacturer FETek
File Size 425.69 KB
Description N-Channel MOSFET
Datasheet download datasheet FKN3504 Datasheet
Additional preview pages of the FKN3504 datasheet.

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Full PDF Text Transcription

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FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKN3504 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 40mΩ ID 3.9A Description The FKN3504 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3504 meet the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.
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