Datasheet Details
| Part number | FKQ6208 |
|---|---|
| Manufacturer | FETek |
| File Size | 545.92 KB |
| Description | Dual N-Channel MOSFET |
| Download | FKQ6208 Download (PDF) |
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| Part number | FKQ6208 |
|---|---|
| Manufacturer | FETek |
| File Size | 545.92 KB |
| Description | Dual N-Channel MOSFET |
| Download | FKQ6208 Download (PDF) |
|
|
|
The FKQ6208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKQ6208 meet the RoHS and Green Product requirement with full function reliability approved.
TSOP6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating 10s Steady State 60 ±20 2.8 2.5 2.2 2 15 1.5 1.1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ.
FETek Technology Corp.
FKQ6208 Dual N-Ch 60V Fast Switching MOSFETs Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS 60V RDSON 100mΩ ID 2.
| Part Number | Description |
|---|---|
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