Datasheet Summary
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- - APPLICATION: High Voltage Applications.
- PNP silicon
- -
- MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -150 -150 -5 -50 1 150 V V V mA W ℃
TO-92L
1. Emitter 2. Collector 3. Base
﹣55~150 ℃
- - ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -150 -150 -5 -0.9 -0.8 120 4.0 5.0 70 MIN. TYP. MAX. UNIT 240 -0.1 -0.1 µA µA V V V V V MHz PF TEST...
