The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
·ç¹âÐÀ¼¼Êõ×ÊÁÏ
■■APPLICATION: High Voltage Applications.
A1024
—PNP silicon —
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -150 -150 -5 -50 1 150 V V V mA W ℃
1
TO-92L
1. Emitter 2. Collector 3. Base
﹣55~150 ℃
■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -150 -150 -5 -0.9 -0.8 120 4.0 5.0 70 MIN. TYP. MAX. UNIT 240 -0.1 -0.1 µA µA V V V V V MHz PF TEST CONDITION VCE= -5V，Ic= -10mA VCB= -150V，IE=0 VEB= -5V，Ic=0 Ic= -0.1mA，IE=0 Ic= -1mA，IB=0 IE= -0.
A1024 Datasheet
