Datasheet Summary
-
- APPLICATION: High Voltage Applications.
- - MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING UNIT
VCBO
-120 V
VCEO
-120 V
VEBO
-5
IC -800 mA
PC 1 W
TJ 150 ℃
Tstg -55~150 ℃
- PNP silicon
- 1 TO-92L 1. Emitter 2. Collector 3. Base
- - ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain hFE 80
240 VCE= -5V，IC= -100mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -120V，IE=0
Emitter Cut-off Current
IEBO
-0.1 µA VEB= -5V，IC=0
Collector-Base Breakdown...
