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■■APPLICATION：GENERAL PURPOSE APPLICATION.
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC PC TJ Tstg
-30 V -25 V -5 V -100 mA 300 mW 150 ℃ ﹣55~150 ℃
A1309
—PNP silicon —
■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Common Emitter DC Current Gain hFE
400
VCE= -10V，Ic= -2mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -30V，IE=0
Emitter Cut-off Current
IEBO
-0.1 µA VEB= -5V，Ic=0
Collector-Base Breakdown Voltage BVCBO -30
V Ic= -0.
A1309 Datasheet
