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B926 - PNP Silicon Transistor

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Part number B926
Manufacturer FGX
File Size 281.90 KB
Description PNP Silicon Transistor
Datasheet download datasheet B926 Datasheet
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    ■■APPLICATION： Power supplies, relay drivers, lamp drivers, electrical equipment. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150℃ B926 —PNP silicon — ■■ELECTRICAL CHARACTERISTICS （Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION DC Current Gain hFE 100 560 VCE= -2V，Ic= -100mA Collector Cut-off Current ICBO -0.1 µA VCB=-20 V，IE=0 Emitter Cut-off Current IEBO -0.1 µA VEB= -4V，Ic=0 Collector-Base Breakdown Voltage BVCBO -30 V Ic= -0.
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