FGX B926
PNP Silicon Transistor
| Part No. | B926 |
|---|---|
| Datasheet | B926 Download |
| Manufacturer |  FGX |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150℃ B926 —PNP silicon —●●
ELECTRICAL CHARACTERISTICS
（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION DC Current Gain hFE 100 560 VCE= -2V，Ic= -100mA Collector Cut-off Current ICBO -0.1 µA VCB=-20 V，IE=0 Emitter Cut-off Current IEBO -0.1 µA VEB= -4V，Ic=0 Collector-Base Breakdown Voltage BVCBO -30 V Ic= -0.1mA，IE=0 Collector-Emitter Breakdown Voltage BVCEO -25 V Ic= -1mA，IB=0 Emitter-Base Breakdown Voltage BVEBO -6 V IE= -0.1mA，Ic=0 Collector-Emitter Saturation Voltage VCE(sat) -0.18 -0.4 V Ic= -1500mA，IB= -75mA Gain bandwidth product fT 150 MHz Ic= -50mA，VCE= -10V Common Base Output Capacitance Cob 19 PF VCB= -10V, IE=0, f = 1MHz●●hFE Classification Classification R hFE 100～200 S 140～280 T 200...