B926 - 2SB926

Features

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics a.

Sanyo Semicon Device

Datasheet Details

Part number	B926
Manufacturer	Sanyo Semicon Device
File Size	83.13 KB
Description	2SB926
Datasheet	B926 Datasheet
Additional preview pages of the B926 datasheet.

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B927 - 2SB927

Full PDF Text Transcription

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Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.

Published: Mar 30, 2015 |