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B926 - 2SB926

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics a.

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Full PDF Text Transcription for B926 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for B926. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp dr...

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ing Applications Applications · Power supplies, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.