Datasheet Summary
- ç¹âÐÀ¼¼Êõ×ÊÁÏ
- - APPLICATION：POWER AMPLIFIER APPLICATION、 SWITCHING APPLICATION.
- - MAXIMUM RATINGS （Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg 30 10 6 2 750 150 V V V A mW ℃
- NPN silicon
- ﹣55~150 ℃
- - ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO 30 10 6 0.86 0.2 150 27 1.5 0.5 MIN. 140 TYP. MAX. UNIT 600 0.1 0.1 µA µA V V V V V MHz PF TEST CONDITION VCE= 1V，Ic=500 mA...
