Datasheet Summary
2SC3279
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications Medium Power Amplifier Applications
- High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range ICP IB PC Tj Tstg 5 0.2 750 150 -55~150 A mW °C °C Symbol VCBO VCES VCEO VEBO IC Rating...
