C3279 datasheet by Toshiba.
| Part number | C3279 |
|---|---|
| Datasheet | C3279-ToshibaSemiconductor.pdf |
| File Size | 104.56 KB |
| Manufacturer | Toshiba |
| Description | 2SC3279 |
|
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2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low saturation voltage:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
C3279 | NPN silicon | FGX |
| Part Number | Description |
|---|---|
| C3233 | 2SC3233 |
| C3265 | 2SC3265 |
| C3266 | 2SC3266 |
| C3267 | 2SC3267 |
| C3268 | 2SC3268 |
| C3295 | 2SC3295 |
| C3298B | SILICON NPN EPITAXIAL TYPE |
