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FHZ2V4~FHZ39V Silicon Z-Diodes
Features
• • • •
Very sharp reverse characteristic Very high stability Low reverse current level VZ-tolerance ± 5%
Applications
Voltage stabilization www.DataSheet4U.com
Absolute Maximum Ratings
Parameter Power dissipation ºÄÉ¢¹¦ÂÊ Z-current ÎÈѹµçÁ÷ Junction temperature ½áΠStorage temperature range ´¢æÎÂ¶È Test Conditions RthJA<300K/W, Tamb=25°C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA °C °C
Maximum Thermal Resistance
Parameter Test Conditions Symbol Value Unit RthJA 500 K/W Junction ambient on PC board 50mmx50mmx1.6mm
Electrical Characteristics
Parameter Forward voltage Test Conditions Type Symbol Min Typ Max Unit IF=100mA VF 1.