FHZ13V
FHZ13V is (FHZxxV) Silicon Z-Diodes manufactured by FH.
Features
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Very sharp reverse characteristic Very high stability Low reverse current level VZ-tolerance ± 5%
Applications
Voltage stabilization ..
Absolute Maximum Ratings
Parameter Power dissipation ºÄÉ¢¹¦ÂÊ Z-current ÎÈѹµçÁ÷ Junction temperature ½áΠStorage temperature range ´¢æÎÂ¶È Test Conditions Rth JA<300K/W, Tamb=25°C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit m W m A °C °C
Maximum Thermal Resistance
Parameter Test Conditions Symbol Value Unit Rth JA 500 K/W Junction ambient on PC board 50mmx50mmx1.6mm
Electrical Characteristics
Parameter Forward voltage Test Conditions Type Symbol Min Typ Max Unit IF=100m A VF 1.2 V
Type
VZnom1)
Test current IZT
Maximum zeber Impedance
ZZT ZZK at at IZT IZK=1m A IR µA 50 10
Maximum Reverse Leakage Current
Test-Voltage Volts 1.0 1.0
Forward Voltage Vf at If=100m A V 1.2 1.2
Temperature coefficient
V FHZ2V4 2.28-2.56 FHZ2V7 2.5-2.9 m A 5 5
Ohm 85 85
Ohm 600 600
%/°C -0.070 -0.070
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Type
VZnom1)
Test current IZT
Maximum zeber Impedance
ZZT ZZK at at IZT IZK=1m A IR µA 4 2 2 2 1
Maximum Reverse Leakage Current
Test-Voltage Volts 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.0 7.0 7.5 85 90 10 11 12 14 15 17 18 20
Forward Voltage Vf at If=100m A V 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2
Temperature...