30H150 Datasheet PDF

FEATURES

● 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V
● Super High Dense Cell Design
● Reliable and Rugged
● Avalanche Rated
● Lead Free and Green Devices Available (RoHS Compliant)

APPLICATIONS

● Power Management in Desktop Computer or DC/DC Converters. D G S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.5mH Note * Current limited by bond wire. 1 TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating Unit 30 ±20 150 -55 to 150 150 200 120 150* 68 50 20 2.5 50 225 V °C °C A A A W °C/W °C/W mJ 0752-7777359

ELECTRICAL CHARACTERISTICS

(TA =...