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30H150 - N-Channel MOSFET

Key Features

  • 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Avalanche Rated.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number 30H150
Manufacturer FNK
File Size 872.58 KB
Description N-Channel MOSFET
Datasheet download datasheet 30H150 Datasheet

Full PDF Text Transcription for 30H150 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30H150. For precise diagrams, and layout, please refer to the original PDF.

30H150 N-Channel Enhancement Mode MOSFET Features • 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugge...

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5mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters.

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