FNK FNK01NS12
The FNK01NS12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK01NS12 |
|---|---|
| Datasheet | FNK01NS12 Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. FNK01NS12GENERAL FEATURES
● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK01NS12 FNK01NS12 TO-220 Reel Size - Tape width -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain
