FNK FNK01NS12T
The FNK01NS12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK01NS12T |
|---|---|
| Datasheet | FNK01NS12T Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. FNK01NS12TGENERAL FEATURES
● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package FNK01NS12T FNK01NS12T TO-247 Reel Size - Tape width -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Dr
