FNK03N02
Description
The FNK03N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =30V,ID =100A RDS(ON) <2.5mΩ @ VGS=10V (Typ:1.9mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability Schematic diagram
