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FNK03N02E - N-Channel Power MOSFET

General Description

The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =140A RDS(ON).

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Datasheet Details

Part number FNK03N02E
Manufacturer FNK
File Size 1.19 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK03N02E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK03N02E FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.