Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =140A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Top View
DFN5X6 Bottom View
Application
- Power switching application
- Hard switched and high frequency circuits
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