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FNK12N12D - N-Channel Power MOSFET

Description

TheFNK12N12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number FNK12N12D
Manufacturer FNK
File Size 1.44 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK12N12D Datasheet

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Full PDF Text Transcription

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FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK12N12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK12N12D General Features ● VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.
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